查尔姆斯理工大学

Doctoral student in Advanced characterization of GaN based electronics for high frequency applications

项目介绍

Research in electronics in based on new semiconductors offers challenges in several thrilling areas. We are now looking for a new team member to join us in our efforts in exploring ultimate limitations in materials and device concepts of transistors based on III-nitride semiconductors. In this work device characterization and modelling are important tools enabling better understanding and directions of optimization of device performance.

About us 

The Microwave Electronics Laboratory (MEL) at the Department of Microtechnology and Nanoscience employs more than 40 people performing world-class research on high speed electronic devices, circuits, and systems for a wide range of communication and sensing applications in the frequency range from 1 GHz to 500 GHz. Our facilities include a uniquely well-equipped laboratory for advanced millimeter wave measurements and a state-of-the art cleanroom facility.
A major part our research is targeting new semiconductor materials and devices to enable higher capacity and improved energy efficiency in a wide range of future microwave and millimeter systems. In recent years, electronic devices and circuits based on wide bandgap semiconductors such as III-nitrides (GaN) have demonstrated disruptive performance in terms of frequency, power, and efficiency figure of merits. We will now investigate advanced device concepts to further harvest the potential of III-nitride devices and circuits. Our research in GaN HEMT technology target application within wireless communication and radar systems.

About the research project  

This PhD student position will focus on research on III-nitride devices and circuits for high frequency applications. We are exploring new concepts in III-nitride semiconductor material and device processing to optimize important properties, such as high frequency operation, output power, linearity, and efficiency. The goal is to push the limits of III-nitride semiconductor devices. New epitaxial designs are grown in-house or by our collaborative partners. A specific type of transistors, high electron mobility transistors, HEMTs, are fabricated, characterized and evaluated at Chalmers . In this endeavor, the device characterization and modelling are key tools, which offer many challenges. Specifically, the characterization and modelling of non-linear characteristics (e.g. large-signal and trapping effects) are important research areas.

Who we are looking for

The following requirements are mandatory:

  • To qualify, you should hold a MSc degree in physics or electrical engineering (or equivalent), generally not older than two years.
  • Well-documented capability of communicating in English, both spoken and written.
  • Important qualities are enthusiasm, to be able to drive and conclude projects independently, take own initiatives and discuss/develop own ideas, be creative and have a problem-solving mindset. The project is in collaboration with other researchers and industry. Therefore, excellent cooperation and social abilities are important

The following experience will strengthen your application: 

  • Experiences in microwave measuremets and characterization of semiconductor devices are meritorious. 

What you will do

  • Take courses at an advanced level within the Graduate school of Microtechnology and Nanoscience
  • Develop your own scientific concepts and communicate the results of your research verbally and in writing 
  • The position generally also includes teaching on Chalmers’ undergraduate level or performing other duties corresponding to 20 percent of working hours
  • The project will include a wide range of activities such defining and designing non-linear measurements of importance to characterize semiconductor devices. Also, based on our long tradition on compact modelling, methodologies of extracting small- and large-signal models will be developed.

You will be a member in a team of other PhD students and senior researchers, both from industry and academia, working with semiconductor technology development, characterization, modelling, circuit design, and realization of complete wireless system demonstrators. You will mainly perform research combined with some teaching and collaborative activities with partners. A PhD student position at Chalmers typically consists of 4 years of research and courses plus up to 1 year of departmental work (teaching, external projects etc.)

Contract terms  

  • The Doctoral student positions are fully funded from start. 
  • The position is a fixed-term appointment of four years, with the possibility to teach up to 20%, which extends the position up to five years. 
  • A starting salary of 34,550 SEK per month (valid from May 25, 2025). 
  • Doctoral studies require physical presence throughout the entire study period. A valid residence permit must be presented by the study start date; otherwise the admission may be withdrawn. 

What we offer 

  • As a Doctoral student at Chalmers, you are an employee and enjoy all employee benefits. Read more about  working at Chalmers  and our benefits for employees. 
  • A dynamic and inspiring working environment in the coastal city of Gothenburg
  • Read more about Sweden’s generous parental leave, subsidized day care, free schools, healthcare etc at Move To Gothenburg. 

Chalmers is dedicated to improving gender balance and actively works with equality projects, such as the GENIE Initiative for gender equality and excellence. We celebrate diversity and consider equality and inclusion as fundamental aspects of all our activities. 

If Swedish is not your native language, Chalmers offers Swedish courses to help you settle in.

Find more general information about doctoral studies at Chalmers here.  

Application procedure 

The application should be written in English and attached as PDF-files, as below. Maximum size for each file is 40 MB. Please note that the system does not support Zip files. 

CV 

Personal letter 

  • A brief introduction about yourself. 
  • A brief motivation as to why you are interested in this position. 

Bachelor’s and, if available, master’s thesis together with the transcripts. 

Use the button at the foot of the page to reach the application form.  

A background check may be conducted as part of the application process.

Please note:
 The applicant is responsible for ensuring that the application is complete. Incomplete applications and applications sent by email will not be considered. Contact details to references will be requested after the interview. 

We welcome your application no later than 2026-05-20 

For questions, please contact:  

Niklas Rorsman 
Research Professor 
niklas.rorsman@chalmers.se

We look forward to your application! 

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截止日期 2026-05-20
查尔姆斯理工大学

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查尔姆斯理工大学是一所以工程技术、自然科学和建筑学的教育与研究为主旨的欧洲顶尖理工院校。
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联系方式

电话: +46 (0)31-772 10 00

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